Patent families

Recently filed/received by team members and exploited in the Center

VCSELs:

• Patent family 1 (TUB 117): D. Bimberg, G. Larisch and J. Lott: "Photon lifetime tuning", granted in US 9,9791,58 + EU EP 3 568 886 B1 (nationalized in GE, FR, NL, UK) + China ZL1880005246.                      Tuning the photon lifetime in a VCSEL by evaporating ultra thin layers of dielectrics on the top mirror enables to maximize the output power and/or minimize the energy to data rate EDR as a function of the... More
• Patent family 2 (CAS 101): D. Bimberg and G. Larisch: "Flip Chip Bonding of VCSELs", granted in US 12 095 230 B2 + EU EP 3 739 700 (nationalized in GE, FR, NL) + under examination in China CN 11316952A   Substrate removal and flip chip integration of GaAs based VCSEL and Si based devices... More
• Patent family 3 (CAS 102-1): G. Larisch, Tian Sicong and D. Bimberg: "Holes for fabrication of oxide aperture, then filled with metal as thermal sink, polarization on demand", granted in EU EP 3 961 829  (nationalized in GE, FR, UK)+ US 17/170,834 + China CN 113594855 A                                                       Enabling larger power single-mode VCSELs with reduced series resistance... More
• Patent family 4 (CAS 102-2): G. Larisch, Tian Sicong and D. Bimberg: "Multi-Aperture VCSEL", granted in US 17/170,709 + EU EP 20 210 737.1 (nationalized in GE, FR, UK) +  China CN 112382927A under examination                                                                                                                                                   Enabling several (e.g.single mode) VCSELs in a single mesa device leading to large output power + with switchable properties and/or polarization multiplexing. More
• Patent family 5 (CAS 103): G. Larisch, Tian Sicong and D. Bimberg: "Radiation Emitter" granted in US 11,936,163 +  EU EP 4007092 B1 (nationalized in GE, FR, UK) +  China CN 113140962 A               Multisection VCSEL for advanced multiplexing, polarization diversity,... More
• Patent family 6 (CAS 104, EP2 and US2):  Tian Sicong, D. Bimberg and M. A. Maricar,  "Radiation Emitter and Method of Fabrication" submitted in EU EP23199013 + US 18/377 468 + China CN 118040455                                                                                                                                                               Normally processed VCSELs or EELs with blind holes filled with material showing large heat and electrical conductivity... More
  
  

High Brightness Edge Emitting Lasers:

• Patent family 1: V. Kalosha and D. Bimberg: "Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making them", US 9,705,285 and EP 15 152 286.9         HIBBEE Laser, suppression of higher order modes leading to record high brilliance fundamental mode, based on modified vertical photonic band gap epi structure... More
• Patent family 2: V. Kalosha, K. Posilovic and D. Bimberg: "Device comprising a Laser", US 8,396,091 and EP 12 702 454                                                                                                                                         Corrugated lateral waveguide structure leading to suppression of higher order modes and increased output power of fundamental mode and minumum astimatism in the micron range... More

Mode Locked Lasers

• Patent family 1: D. Arsenijevic, M. Kleinert, D. Bimberg: "Optoelectronic Oscillator", US 9,780,525 + EP 14 742 458.4 + GER 102 013 211 633.0                                                                                                             Suppression of timing jitter in mode-locked multi-GHz lasers to the fs-range by simple passive back-coupling of small proportion of light... More